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PD46184095BF1-E40-EQ1 Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # PD46184095BF1-E40-EQ1
Description  18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PD46184095BF1-E40-EQ1 Datasheet(HTML) 8 Page - Renesas Technology Corp

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μPD46184095B, μPD46184185B
R10DS0115EJ0200 Rev.2.00
Page 8 of 34
Nov 09, 2012
Power-On Sequence in DDR II SRAM
DDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
The following timing charts show the recommended power-on sequence.
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ
can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during power-up. The
following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ
can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during power-down.
Power-On Sequence
Apply power and tie DLL# to HIGH.
Apply VDDQ before VREF or at the same time as VREF.
Provide stable clock for more than 20
μs to lock the PLL.
Continuous min.4 NOP(LD# = high) cycles are required after PLL lock up is done.
PLL Constraints
The PLL uses K clock as its synchronizing input and the input should have low phase jitter which is specified as
TKC var. The PLL can cover 120 MHz as the lowest frequency. If the input clock is unstable and the PLL is
enabled, then the PLL may lock onto an undesired clock frequency.
Power-On Waveforms
20
μs or more
Stable Clock
VDD/VDDQ Stable (< ±0.1 V DC per 50 ns)
VDD/VDDQ
Clock
Unstable Clock
Normal Operation
Start
DLL#
Fix HIGH (or tied to VDDQ)
LD#
4 Times NOP


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