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STB11N52K3 Datasheet(PDF) 7 Page - STMicroelectronics |
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STB11N52K3 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 20 page STB11N52K3, STF11N52K3, STP11N52K3 Electrical characteristics Doc ID 018868 Rev 2 7/20 Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature VGS 6 4 2 0 0 Qg(nC) (V) 8 20 10 VDD=420V ID=10A 40 12 300 200 100 0 400 VDS 60 350 250 150 50 AM09116v1 RDS(on) 0.42 0.40 0.38 0.36 0 4 ID(A) ( Ω) 2 6 0.44 0.46 0.48 0.50 VGS=10V 8 0.52 0.54 10 12 AM09117v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM09118v1 Eoss 3 2 1 0 0 100 VDS(V) (µJ) 400 4 200 300 5 6 500 AM09119v1 VGS(th) 1.00 0.90 0.80 0.70 -75 TJ(°C) (norm) -25 1.10 75 25 125 AM09120v1 RDS(on) 1.5 1.0 0.5 0.0 -50 0 TJ(°C) (norm) -25 75 25 50 100 2.5 2.0 ID=1.2A AM09121v1 |
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