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C450TR5050M-0211 Datasheet(PDF) 2 Page - Cree, Inc

Part # C450TR5050M-0211
Description  High-Reliability Eutectic, Solder Paste or Preforms
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

C450TR5050M-0211 Datasheet(HTML) 2 Page - Cree, Inc

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Copyright©2011Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe
Creelogoareregisteredtrademarks,andTMandTR5050MaretrademarksofCree,Inc.
2
CPR3EX Rev. -
Cree,Inc.
4600SiliconDrive
Durham,NC27703
USATel:+1.919.313.5300
www.cree.com
Maximum Ratings at T
A = 25°C
Notes 1&3
CxxxTR5050M-Sxx000
DCForwardCurrentNote4
200mA
PeakForwardCurrent(1/10dutycycle@1kHz)
250mA
LEDJunctionTemperature
150°C
ReverseVoltage
5V
OperatingTemperatureRange
-40°Cto+100°C
StorageTemperatureRange
-40°Cto+100°C
ElectrostaticDischargeThreshold(HBM)Note2
1000V
ElectrostaticDischargeClassification(MIL-STD-883E)Note2
Class2
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 120 mA
Note 3
Part Number
Forward Voltage (V
f, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
D, nm)
Min.
Typ.
Max.
Max.
Typ.
C450TR5050M-Sxx000
2.7
3.3
3.5
2
20
Mechanical Specifications
CxxxTR5050M-Sxx000
Description
Dimension
Tolerance
P-NJunctionArea(μm)
426x443
±35
ChipArea(μm)
500x500
±35
ChipThickness(μm)
175
±15
AuBondPadDiameterAnode(μm)
90
±10
AuBondPadThicknesses(μm)
1.0
±0.5
AuBondPadDiamaterCathode(μm)
98
±10
BottomContactMetal(um)
288x288
±25
BottomArea(μm)
320x320
±45
BottomContactMetalThickness(μm)
3.0
±1.0
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for
characterization.Ratingsforotherpackagesmaydiffer.Junctiontemperatureshouldbecharacterizedinaspecificpackagetodeterminelimitations.
Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds).
2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalancheenergytest(RAET).
TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.
3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembledandoperatedat120
mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgivenarewithintherangeofaveragevalues
expectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.AllmeasurementsweremadeusinglampsinT-13/4packages
(withHysolOS4000epoxyencapsulantandclearepoxydieattach).OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE.
4. ThemaximumforwardcurrentisdeterminedbythethermalresistancebetweentheLEDjunctionandambient.Itiscrucialfortheend-producttobe
designedinamannerthatminimizesthethermalresistancefromtheLEDjunctiontoambientinordertooptimizeproductperformance.
Max If (mA)
200
Max Vf @Max If (V)
3.5
Max Tj (Deg C)
150
Max Power (W)
0.7
Thermal Resistance (C/W)
10
20
30
If @ Tamb
Rth (j-A) =
Tamb
Tamb
200
25
25
25
200
143
136
129
0
150
150
150
0
50
100
150
200
250
50
75
100
125
150
175
Ambient Temperature (
C)
Rth j-a = 10 C/W
Rth j-a = 20 C/W
Rth j-a = 30 C/W
Rth j-a = 40 C/W


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