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C450TR5050M-0211 Datasheet(PDF) 2 Page - Cree, Inc |
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C450TR5050M-0211 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 5 page Copyright©2011Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe Creelogoareregisteredtrademarks,andTMandTR5050MaretrademarksofCree,Inc. 2 CPR3EX Rev. - Cree,Inc. 4600SiliconDrive Durham,NC27703 USATel:+1.919.313.5300 www.cree.com Maximum Ratings at T A = 25°C Notes 1&3 CxxxTR5050M-Sxx000 DCForwardCurrentNote4 200mA PeakForwardCurrent(1/10dutycycle@1kHz) 250mA LEDJunctionTemperature 150°C ReverseVoltage 5V OperatingTemperatureRange -40°Cto+100°C StorageTemperatureRange -40°Cto+100°C ElectrostaticDischargeThreshold(HBM)Note2 1000V ElectrostaticDischargeClassification(MIL-STD-883E)Note2 Class2 Typical Electrical/Optical Characteristics at T A = 25°C, If = 120 mA Note 3 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λ D, nm) Min. Typ. Max. Max. Typ. C450TR5050M-Sxx000 2.7 3.3 3.5 2 20 Mechanical Specifications CxxxTR5050M-Sxx000 Description Dimension Tolerance P-NJunctionArea(μm) 426x443 ±35 ChipArea(μm) 500x500 ±35 ChipThickness(μm) 175 ±15 AuBondPadDiameterAnode(μm) 90 ±10 AuBondPadThicknesses(μm) 1.0 ±0.5 AuBondPadDiamaterCathode(μm) 98 ±10 BottomContactMetal(um) 288x288 ±25 BottomArea(μm) 320x320 ±45 BottomContactMetalThickness(μm) 3.0 ±1.0 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for characterization.Ratingsforotherpackagesmaydiffer.Junctiontemperatureshouldbecharacterizedinaspecificpackagetodeterminelimitations. Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds). 2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalancheenergytest(RAET). TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown. 3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembledandoperatedat120 mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgivenarewithintherangeofaveragevalues expectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.AllmeasurementsweremadeusinglampsinT-13/4packages (withHysolOS4000epoxyencapsulantandclearepoxydieattach).OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE. 4. ThemaximumforwardcurrentisdeterminedbythethermalresistancebetweentheLEDjunctionandambient.Itiscrucialfortheend-producttobe designedinamannerthatminimizesthethermalresistancefromtheLEDjunctiontoambientinordertooptimizeproductperformance. Max If (mA) 200 Max Vf @Max If (V) 3.5 Max Tj (Deg C) 150 Max Power (W) 0.7 Thermal Resistance (C/W) 10 20 30 If @ Tamb Rth (j-A) = Tamb Tamb 200 25 25 25 200 143 136 129 0 150 150 150 0 50 100 150 200 250 50 75 100 125 150 175 Ambient Temperature ( C) Rth j-a = 10 C/W Rth j-a = 20 C/W Rth j-a = 30 C/W Rth j-a = 40 C/W |
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