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C460TR260-0417 Datasheet(PDF) 2 Page - Cree, Inc

Part # C460TR260-0417
Description  Rectangular LED RF Performance Low Forward Voltage - 3.1 V typ at 20 mA
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

C460TR260-0417 Datasheet(HTML) 2 Page - Cree, Inc

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Copyright © 2007-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and TR and TR260 are trademarks of Cree, Inc.
2
CPR3DK Rev C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at T
A = 25°C
Notes 1&3
CxxxTR260-Sxx00
DCForwardCurrent
50mA
PeakForwardCurrent(1/10dutycycle@1kHz)
100mA
LEDJunctionTemperature
125°C
ReverseVoltage
5V
OperatingTemperatureRange
-40°Cto+100°C
LEDChipStorageTemperatureRange
-40°Cto+120°C
DieSheetStorageConditions
≤30°C/≤85%RH
ElectrostaticDischargeThreshold(HBM)Note2
1000V
ElectrostaticDischargeClassification(MIL-STD-883E)Note2
Class2
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 20 mA
Note 3
Part Number
Forward Voltage (V
f, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(
λ
D, nm)
Min.
Typ.
Max.
Max.
Typ.
C450TR260-Sxx00
2.7
3.1
3.4
2
20
C460TR260-Sxx00
2.7
3.1
3.4
2
21
C470TR260-Sxx00
2.7
3.1
3.4
2
21
C527TR260-Sxx00
2.9
3.2
3.6
2
35
Mechanical Specifications
CxxxTR260-Sxx00
Description
Dimension
Tolerance
P-NJunctionArea(μm)
220x440
±35
ChipArea(μm)
260x480
±35
ChipThickness(μm)
115
±15
AuBondPadDiameterAnode(μm)
90
-5,+15
AuBondPadThicknesses(μm)
1.0
±0.5
AuBondPadAreaCathode(μm)
98x98
-5,+15
BottomArea(μm)
160x380
±35
Notes:
1. Maximumratingsarepackagedependent.TheaboveratingsweredeterminedusingaT-13/4package(withHysolOS4000epoxy
encapsulationandclearepoxydieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Theforwardcurrents(DC
andPeak)arenotlimitedbythediebutbytheeffectoftheLEDjunctiontemperatureonthepackage.Thejunctiontemperature
limitof125°CisalimitoftheT-13/4package;junctiontemperatureshouldbecharacterizedinaspecificpackagetodetermine
limitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds).
2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche
energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown.TheRAETprocedureis
performedoneachdie.TheESDclassificationofClass2isbasedonsampletestingaccordingtoMIL-STD-883E.
3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled
andoperatedat20mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven
arewithintherangeofaveragevaluesexpectedbythemanufacturerinlargequantitiesandareprovidedforinformationonly.All
measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxyencapsulantandclearepoxydieattach).
OpticalcharacteristicsaremeasuredinanintegratingsphereusingIlluminanceE.
4. Specificationsaresubjecttochangewithoutnotice.


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