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C450DA3547-0307 Datasheet(PDF) 2 Page - Cree, Inc |
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C450DA3547-0307 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 5 page Copyright©2010Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.Creeandthe Creelogoareregisteredtrademarks,andDAandDA3547aretrademarksofCree,Inc. 2 CPR3EL Rev. A Cree,Inc. 4600SiliconDrive Durham,NC27703 USATel:+1.919.313.5300 www.cree.com Maximum Ratings at T A = 25°C Notes 1,3, & 4 CxxxDA3547-Sxxx00 DCForwardCurrent 150mA PeakForwardCurrent(1/10dutycycle@1kHz) 200mA LEDJunctionTemperature 150°C ReverseVoltage 5V OperatingTemperatureRange -40°Cto+100°C StorageTemperatureRange -40°Cto+100°C ElectrostaticDischargeThreshold(HBM)Note2 1000V ElectrostaticDischargeClassification(MIL-STD-883E)Note2 Class2 Typical Electrical/Optical Characteristics at T A = 25°C, If = 50 mA Note 3 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max ( λ D, nm) Min. Typ. Max. Max. Typ. C450DA3547-Sxxx00 2.8 3.1 3.4 2 20 C460DA3547-Sxxx00 2.8 3.1 3.4 2 21 Mechanical Specifications CxxxDA3547-Sxxx00 Description Dimension Tolerance P-NJunctionArea(μm) 296x416 ±35 ChipBottomArea(μm) 350x470 ±35 ChipTopArea(μm) 200x320 ±35 ChipThickness(μm) 155 ±15 AuSnBondPadWidth–Anode(um) 90 ±15 AuSnBondPadLength–Anode(um) 296 ±35 AuSnBondPadWidth–Cathode(um) 236 ±35 AuSnBondPadLength–Cathode(um) 296 ±35 BondPadGap(μm) 90 ±15 AuSnBondPadThickness(μm) 3 ±0.5 Notes: 1. Maximumratingsarepackage-dependent.Theaboveratingsweredeterminedusingachipsub-mountonMCPCB(withsiliconeencapsulationand intrinsicAuSnmetaldieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Junctiontemperatureshouldbecharacterizedinaspecific packagetodeterminelimitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds). 2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalancheenergytest(RAET). TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at50mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgivenarewithintherangeofaverage valuesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.AllmeasurementsweremadeusinglampsinT-13/4 packages(withHysolOS4000epoxyencapsulantandintrinsicAuSnmetaldieattach).Opticalcharacteristicsmeasuredinanintegratingsphere usingIlluminanceE. 4. ThemaximumforwardcurrentisdeterminedbythethermalresistancebetweentheLEDjunctionandambient.Itiscrucialfortheend-producttobe designedinamannerthatminimizesthethermalresistancefromtheLEDjunctiontoambientinordertooptimizeproductperformance. 0 20 40 60 80 100 120 140 160 50 75 100 125 150 175 Ambient Temperature ( C) Rth j-a = 10 C/W Rth j-a = 20 C/W Rth j-a = 30 C/W Rth j-a = 40 C/W |
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