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C450DA1000-S48500 Datasheet(PDF) 2 Page - Cree, Inc

Part No. C450DA1000-S48500
Description  Direct Attach LED Technology Rectangular LED RF Performance
Download  5 Pages
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Maker  CREE [Cree, Inc]
Homepage  http://www.cree.com/
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C450DA1000-S48500 Datasheet(HTML) 2 Page - Cree, Inc

   
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Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
2
CPR3ES Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at T
A = 25°C
Notes 1,2 & 3
CxxxDA1000-Sxx000
DCForwardCurrent
1000mA
PeakForwardCurrent(1/10dutycycle@1kHz)
1250mA
LEDJunctionTemperature
150°C
ReverseVoltage
5V
OperatingTemperatureRange
-40°Cto+100°C
StorageTemperatureRange
-40°Cto+100°C
Typical Electrical/Optical Characteristics at T
A = 25°C, If = 350 mA
Note 2
Part Number
Forward Voltage (V
f, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(
λ
D, nm)
Min.
Typ.
Max.
Max.
Typ.
C450DA1000-Sxx000
2.7
3.15
3.5
2
20
C460DA1000-Sxx000
2.7
3.15
3.5
2
21
Mechanical Specifications
CxxxDA1000-Sxx000
Description
Dimension
Tolerance
P-NJunctionArea(μm)
960x960
±35
ChipBottomArea(μm)
1000x1000
±35
ChipTopArea(μm)
630x630
±45
ChipThickness(μm)
335
±25
AuSnBondPadWidth–Anode(um)
75
±15
AuSnBondPadLength–Anode(um)
945
±35
AuSnBondPadWidth–Cathode(um)
795
±35
AuSnBondPadLength–Cathode(um)
945
±35
BondPadGap(μm)
75
±15
AuSnBondPadThickness(μm)
3
±0.5
Notes:
1.
Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone
encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be
characterizedinaspecificpackagetodeterminelimitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds).
2.
Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembledandoperatedat350
mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgivenarewithintherangeofaveragevalues
expectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.AllmeasurementsweremadeusinglampsinT-1¾packages(with
HysolOS4000epoxyencapsulantandintrinsicAuSnmetaldieattach).OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE.
3.
ThemaximumforwardcurrentisdeterminedbythethermalresistancebetweentheLEDjunctionandambient.Itiscrucialfortheend-producttobe
designedinamannerthatminimizesthethermalresistancefromtheLEDjunctiontoambientinordertooptimizeproductperformance.
0
200
400
600
800
1000
1200
25
50
75
100
125
150
175
Ambient Temperature (
C)
Rth j-a = 10 C/W
Rth j-a = 15 C/W
Rth j-a = 20 C/W
Rth j-a = 25 C/W


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