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HUF76139P3 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. HUF76139P3
Description  75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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HUF76139P3 Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
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©2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
HUF76139P3, HUF76139S3S
75A, 30V, 0.0075 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76139.
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.0075Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76139P3
TO-220AB
76139P
HUF76139S3S
TO-263AB
76139S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76139S3ST.
D
G
S
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
January 2003


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