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HUF76139P3 Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. HUF76139P3
Description  75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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HUF76139P3 Datasheet(HTML) 3 Page - Fairchild Semiconductor

 
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©2003 Fairchild Semiconductor Corporation
HUF76139P3, HUF76139S3S Rev. B1
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 15V, ID ≅ 75A
RL = 0.200Ω, VGS = 10V,
RGS = 10Ω
(Figures 16, 21, 22)
--
120
ns
Turn-On Delay Time
td(ON)
-16
-
ns
Rise Time
tr
-65
-
ns
Turn-Off Delay Time
td(OFF)
-90
-
ns
Fall Time
tf
-55
-
ns
Turn-Off Time
tOFF
--
218
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 10V
VDD = 15V,
ID ≅ 64A,
RL = 0.234Ω
Ig(REF) = 1.0mA
(Figures 14, 19, 20)
-65
78
nC
Gate Charge at 5V
Qg(5)
VGS = 0V to 5V
-
38
46
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 1V
-
2.5
3
nC
Gate to Source Gate Charge
Qgs
-7.60
-
nC
Gate to Drain “Miller”Charge
Qgd
-
18.40
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
-
2700
-
pF
Output Capacitance
COSS
-
1100
-
pF
Reverse Transfer Capacitance
CRSS
-200
-
pF
Electrical Specifications
TA = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 75A
-
-
1.25
V
Reverse Recovery Time
trr
ISD = 75A, dISD/dt = 100A/µs-
-
85
ns
Reverse Recovered Charge
QRR
ISD = 75A, dISD/dt = 100A/µs
-
-
160
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
TC, CASESC TEMPERATURE (
oC)
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
20
40
60
80
25
50
75
100
125
150
VGS = 10V
VGS = 4.5V
TC, CASE TEMPERATURE (
oC)
HUF76139P3, HUF76139S3S


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