MT47H16M16BG-3ITB datasheet(41/129 Pages) MICRON

Part #	MT47H16M16BG-3ITB

Description	256Mb: x4, x8, x16 DDR2 SDRAM

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Manufacturer	MICRON [Micron Technology]

Direct Link	http://www.micron.com

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Input Electrical Characteristics and Operating Conditions

Table 14: Input DC Logic Levels

All voltages are referenced to VSS

Parameter

Symbol

Min

Max

Units

Input high (logic 1) voltage

VIH(DC)

VREF(DC) + 125

VDDQ1

mV

Input low (logic 0) voltage

VIL(DC)

–300

VREF(DC) - 125

mV

Note:

1. VDDQ + 300mV allowed provided 1.9V is not exceeded.

Table 15: Input AC Logic Levels

All voltages are referenced to VSS

Parameter

Symbol

Min

Max

Units

Input high (logic 1) voltage (-37E/-5E)

VIH(AC)

VREF(DC) + 250

VDDQ1

mV

Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)

VIH(AC)

VREF(DC) + 200

VDDQ1

mV

Input low (logic 0) voltage (-37E/-5E)

VIL(AC)

–300

VREF(DC) - 250

mV

Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)

VIL(AC)

–300

VREF(DC) - 200

mV

Note:

1. Refer to AC Overshoot/Undershoot Specification (page 51).

Figure 11: Single-Ended Input Signal Levels

650mV

775mV

864mV

882mV

900mV

918mV

936mV

1,025mV

1,150mV

V

IL(AC)

V

IL(DC)

V

REF - AC noise

V

REF - DC error

V

REF + DC error

V

REF + AC noise

V

IH(DC)

V

IH(AC)

Note:

1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.

256Mb: x4, x8, x16 DDR2 SDRAM

Input Electrical Characteristics and Operating Conditions

PDF: 09005aef8117c187

256MbDDR2.pdf - Rev. N 7/11 EN

41

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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