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MT47H16M16BG-3ITB Datasheet(PDF) 28 Page - Micron Technology

Part # MT47H16M16BG-3ITB
Description  256Mb: x4, x8, x16 DDR2 SDRAM
Download  129 Pages
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT47H16M16BG-3ITB Datasheet(HTML) 28 Page - Micron Technology

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Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
VDDQ = 1.8V ±0.1V, VDD = 1.8V ±0.1V
AC Characteristics
-187E
-25E
-25
-3E
-3
-37E
-5E
Units Notes
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Period jitter
tJITper
–90
90
–100
100
–100
100
–125
125
–125
125
–125
125
–125
125
ps
12
Half period
tJITdty
–75
75
–100
100
–100
100
–125
125
–125
125
–125
125
–150
150
ps
13
Cycle to cycle
tJITcc
180
200
200
250
250
250
250
ps
14
Cumulative error,
2 cycles
tERR2per
–132
132
–150
150
–150
150
–175
175
–175
175
–175
175
–175
175
ps
15
Cumulative error,
3 cycles
tERR3per
–157
157
–175
175
–175
175
–225
225
–225
225
–225
225
–225
225
ps
15
Cumulative error,
4 cycles
tERR4per
–175
175
–200
200
–200
200
–250
250
–250
250
–250
250
–250
250
ps
15
Cumulative error,
5 cycles
tERR5per
–188
188
–200
200
–200
200
–250
250
–250
250
–250
250
–250
250
ps
15, 16
Cumulative error,
6–10 cycles
tERR6–
10per
–250
250
–300
300
–300
300
–350
350
–350
350
–350
350
–350
350
ps
15, 16
Cumulative error,
11–50 cycles
tERR11–
50per
–425
425
–450
450
–450
450
–450
450
–450
450
–450
450
–450
450
ps
15
DQS output access
time from CK/CK#
tDQSCK
–300
300
–350
350
–350
350
–400
400
–400
400
–450
450
–500
500
ps
19
DQS read pream-
ble
tRPRE
MIN = 0.9 × tCK
MAX = 1.1 × tCK
tCK
17, 18,
19
DQS read
postamble
tRPST
MIN = 0.4 × tCK
MAX = 0.6 × tCK
tCK
17, 18,
19, 20
CK/CK# to DQS
Low-Z
tLZ1
MIN = tAC (MIN)
MAX = tAC (MAX)
ps
19, 21,
22


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