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IS64WV5128EDBLL-10KLA1 Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc

Part # IS64WV5128EDBLL-10KLA1
Description  512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS64WV5128EDBLL-10KLA1 Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
1
Rev. B
11/08/2011
Copyright©2011IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatanytimewithout
notice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersareadvisedtoobtainthelat-
estversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts.
IntegratedSiliconSolution,Inc.doesnotrecommendtheuseofanyofitsproductsinlifesupportapplicationswherethefailureormalfunctionoftheproductcanreason-
ablybeexpectedtocausefailureofthelifesupportsystemortosignificantlyaffectitssafetyoreffectiveness.Productsarenotauthorizedforuseinsuchapplications
unlessIntegratedSiliconSolution,Inc.receiveswrittenassurancetoitssatisfaction,that:
a.)theriskofinjuryordamagehasbeenminimized;
b.)theuserassumeallsuchrisks;and
c.)potentialliabilityofIntegratedSiliconSolution,Incisadequatelyprotectedunderthecircumstances
IS61WV5128EDBLL
IS64WV5128EDBLL
FEATURES
• High-speedaccesstime:8,10ns
• LowActivePower:85mW(typical)
• LowStandbyPower:7mW(typical)
CMOSstandby
• Singlepowersupply
—Vdd2.4Vto3.6V(10ns)
—Vdd3.3V±10%(8ns)
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• IndustrialandAutomotivetemperaturesupport
• Lead-freeavailable
• ErrorDetectionandErrorCorrection
512K x 8 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH ECC
DESCRIPTION
The
ISSI IS61/64WV5128EDBLL is ahigh-speed,
4,194,304-bitstaticRAMsorganizedas524,288wordsby
8bits.Itisfabricatedusing
ISSI'shigh-performanceCMOS
technology.Thishighlyreliableprocesscoupledwithinno-
vativecircuitdesigntechniques,yieldshigh-performance
andlowpowerconsumptiondevices.
When CE is HIGH (deselected), the device assumes a
standbymodeatwhichthepowerdissipationcanbere-
duceddownwithCMOSinputlevels.
EasymemoryexpansionisprovidedbyusingChipEnable
andOutputEnableinputs,CEandOE.TheactiveLOW
WriteEnable(WE)controlsbothwritingandreadingof
thememory.
TheIS61/64WV5128EDBLLispackagedintheJEDEC
standard44-pinTSOP-II,36-pinSOJand36-pinMiniBGA
(6mmx8mm).
FUNCTIONAL BLOCK DIAGRAM
NOVEMBER 2011
Memory Array
(512Kx8)
ECC Array
(512Kx4)
Decoder
I/O Data
Circuit
ECC
Column I/O
8
8
12
8
4
Control
Circuit
/CE
/OE
/WE
IO0-7
A0-A18


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