1

Rev. D

05/09/2012

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IS61C1024AL

IS64C1024AL

128K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION

The

speed, low power, 131,072-word by 8-bit CMOS static

RAMs.TheyarefabricatedusingISSI'shigh-performance

CMOStechnology.Thishighlyreliableprocesscoupled

with innovative circuit design techniques, yields higher

performanceandlowpowerconsumptiondevices.

WhenCE1isHIGHorCE2isLOW(deselected),thedevice

assumesastandbymodeatwhichthepowerdissipation

canbereducedbyusingCMOSinputlevels.

EasymemoryexpansionisprovidedbyusingtwoChip

Enableinputs,CE1andCE2.TheactiveLOWWriteEnable

(WE)controlsbothwritingandreadingofthememory.

The IS61C1024AL/IS64C1024AL is available in 32-pin

300-milSOJ,32-pin400-milSOJ,32-pinTSOP(TypeI,

8x20),and32-pinsTSOP(TypeI,8x13.4)packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

CE1

OE

WE

128K x 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VDD

I/O

DATA

CIRCUIT

I/O0-I/O7

CE2

FEATURES

• High-speedaccesstime:12,15ns

• Lowactivepower:160mW(typical)

• Lowstandbypower:1000µW(typical)CMOS

standby

• OutputEnable(OE)andtwoChipEnable

(CE1andCE2)inputsforeaseinapplications

• Fullystaticoperation:noclockorrefresh

required

• TTLcompatibleinputsandoutputs

• Single5V(±10%)powersupply

• Commercial,industrial,andautomotivetempera-

turerangesavailable

• Leadfreeavailable

MAY 2012