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MRF421 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MRF421
Description  RF POWER TRANSISTORS NPN SILICON
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF421 Datasheet(HTML) 2 Page - Motorola, Inc

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MRF421
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
70
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
550
800
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
GPE
10
12
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,
ICQ = 150 mA, f = 30, 30.001 MHz)
η
40
%
Intermodulation Distortion (1)
(VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc,
ICQ = 150 mA, f = 30, 30.001 MHz)
IMD
–33
–30
dB
NOTE:
1. To proposed EIA method of measurement. Reference peak envelope power.
Figure 1. 30 MHz Test Circuit Schematic
C1, C2, C4 — 170 – 780 pF, ARCO 469
C3 — 80 – 480 pF, ARCO 466
C5, C7, C10 — ERIE 0.1
µF, 100 V
C6 — MALLORY 500
µF @ 15 V Electrolytic
C9 — 100
µF, 15 V Electrolytic
C8 — 1000 pF, 350 V UNDERWOOD
R1 — 10
Ω, 25 Watt Wirewound
R2 — 10
Ω, 1.0 Watt Carbon
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16
″ I.D., 5/16″ Long
L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4
″ I.D.
L3 — 1–3/4 Turns, 1/8
″ Tubing, 3/8″ I.D., 3/8″ Long
L4 — 10
µH Molded Choke
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
+
BIAS
RF
INPUT
RF
OUTPUT
12.5 Vdc
+
R1
CR1
C5
C6
L4
L2
C7
C8
L5
C9
C10
C4
L3
C3
R2
C1
C2
L1
D.U.T.


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