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MRF421 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF421
Description  RF POWER TRANSISTORS NPN SILICON
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF421 Datasheet(HTML) 1 Page - Motorola, Inc

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1
MRF421
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for application as a high–power linear amplifier from 2.0 to
30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 100 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
• Intermodulation Distortion @ 100 W (PEP) —
IMD = – 30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
20
Vdc
Collector–Base Voltage
VCBO
45
Vdc
Emitter–Base Voltage
VEBO
3.0
Vdc
Collector Current — Continuous
IC
20
Adc
Withstand Current — 10 s
30
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
290
1.66
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.6
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
V(BR)CEO
20
Vdc
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0)
V(BR)CES
45
Vdc
Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0)
V(BR)CBO
45
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
3.0
Vdc
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C)
ICES
10
mAdc
(continued)
Order this document
by MRF421/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF421
100 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–11, STYLE 1
© Motorola, Inc. 1997
REV 1


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