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FZT956TA Datasheet(PDF) 5 Page - Diodes Incorporated

Part No. FZT956TA
Description  SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT956
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-220
-300
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER
-220
-300
V
IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-200
-240
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-6
-8
V
IE=-100µA
Collector Cut-Off Current
ICBO
-50
-1
nA
µ
A
VCB=-200V
VCB=-200V,Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1kΩ
-50
-1
nA
µ
A
VCB=-200V
VCB=-200V,Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-30
-120
-168
-50
-165
-275
mV
mV
mV
IC=-100mA,IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-400mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-970
-1110 mV
IC=-2A, IB=-400mA
Base-Emitter
Turn-On Voltage
VBE(on)
-810
-950
mV
IC=-2A, VCE=-5V*
Static Forward
Current Transfer Ratio
hFE
100
100
50
200
200
150
10
300
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-5A, VCE=-5V*
Transition Frequency
fT
110
MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
32
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
67
1140
ns
ns
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT956
3 - 287
3 - 288
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
Tamb=25°C
VCE(sat) v IC
I+ -
Collector Current (Amps)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I+ -
Collector Current (Amps)
VBE(on) v IC
IC/IB=10
IC/IB=10
IC/IB=50
IC/IB=10
VCE=1V
VCE=1V
300
200
100
0.001
0.001
0.001
0.001
0.001
Safe Operating Area
Single Pulse Test Tamb=25C
0.1
1
1
10
100
VCE - Collector Voltage (V)
10
DC
10ms
1ms
100µs
100ms
1s
0.01
1000




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