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IRFH4253DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFH4253DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRFH4253DPbF 2 www.irf.com © 2013 International Rectifier June 10, 2013 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage Q1 25 ––– ––– V VGS = 0V, ID = 250µA Q2 25 ––– ––– VGS = 0V, ID = 1.0mA BVDSS/TJ Breakdown Voltage Temp. Coefficient Q1 ––– 22 ––– mV/°C Reference to 25°C, ID = 1.0mA Q2 ––– 22 ––– Reference to 25°C, ID = 10mA Q1 ––– 2.50 3.20 VGS = 10V, ID = 30A RDS(on) Static Drain-to-Source On-Resistance Q2 ––– 0.90 1.10 m VGS = 10V, ID = 30A Q1 ––– 3.70 4.60 VGS = 4.5V, ID = 30A Q2 ––– 1.15 1.45 VGS = 4.5V, ID = 30A VGS(th) Gate Threshold Voltage Q1 1.1 1.6 2.1 V Q1: VDS = VGS, ID = 35µA Q2 1.1 1.6 2.1 Q2: VDS = VGS, ID = 100µA VGS(th)/TJ Gate Threshold Voltage Coefficient Q1 ––– -5.7 ––– mV/°C Q1: VDS = VGS, ID = 35µA Q2 ––– -8.9 ––– Q2: VDS = VGS, ID = 100µA IDSS Drain-to-Source Leakage Current Q1/Q2 ––– ––– 1.0 µA VDS = 20V, VGS = 0V Q1/Q2 ––– ––– 250 VDS = 20V, VGS = 0V IGSS Gate-to-Source Forward Leakage Q1/Q2 ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage Q1/Q2 ––– ––– -100 VGS = -20V gfs Forward Transconductance Q1 131 ––– ––– S VDS = 10V, ID = 30A Q2 164 ––– ––– VDS = 10V, ID = 30A Qg Total Gate Charge Q1 ––– 10 15 Q2 ––– 31 47 Qgs1 Pre-Vth Gate-to-Source Charge Q1 ––– 2.5 ––– Q1 Q2 ––– 4.9 ––– VDS = 13V Qgs2 Post-Vth Gate-to-Source Charge Q1 ––– 1.6 ––– VGS = 4.5V, ID = 30A Q2 ––– 5.4 ––– nC Qgd Gate-to-Drain Charge Q1 ––– 3.8 ––– Q2 Q2 ––– 12 ––– VDS = 13V Qgodr Gate Charge Overdrive Q1 ––– 2.1 ––– VGS = 4.5V, ID = 30A Q2 ––– 8.7 ––– Qsw Switch Charge (Qgs2 + Qgd) Q1 ––– 5.4 ––– Q2 ––– 17.4 ––– Qoss Output Charge Q1 ––– 10 ––– nC VDS = 16V, VGS = 0V Q2 ––– 31 ––– RG Gate Resistance Q1 ––– 2.4 ––– Q2 ––– 1.1 ––– td(on) Turn-On Delay Time Q1 ––– 10 ––– Q1 Q2 ––– 16 ––– VDS = 13V VGS = 4.5V tr Rise Time Q1 ––– 61 ––– ID = 30A, Rg = 1.8 Q2 ––– 98 ––– ns td(off) Turn-Off Delay Time Q1 ––– 13 ––– Q2 Q2 ––– 26 ––– VDS = 13V VGS = 4.5V tf Fall Time Q1 ––– 15 ––– ID = 30A, Rg = 1.8 Q2 ––– 65 ––– Ciss Input Capacitance Q1 ––– 1314 ––– Q2 ––– 3756 ––– VGS = 0V Coss Output Capacitance Q1 ––– 365 ––– pF VDS = 13V Q2 ––– 1205 ––– ƒ = 1.0MHz Crss Reverse Transfer Capacitance Q1 ––– 92 ––– Q2 ––– 286 ––– |
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