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IRFH4251DPBF Datasheet(PDF) 3 Page - International Rectifier |
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IRFH4251DPBF Datasheet(HTML) 3 Page - International Rectifier |
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3 / 13 page  IRFH4251DPbF 3 www.irf.com © 2013 International Rectifier June 10, 2013 Avalanche Characteristics Parameter Q1 Max. Q2 Max. Units EAS Single Pulse Avalanche Energy 61 1292 mJ IAR Avalanche Current 30 60 A Typ. ––– ––– Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current Q1 ––– ––– 45 A MOSFET symbol (Body Diode) Q2 ––– ––– 45 showing the ISM Pulsed Source Current Q1 ––– ––– 120 A integral reverse (Body Diode) Q2 ––– ––– 750 p-n junction diode. VSD Diode Forward Voltage Q1 ––– ––– 1.0 V TJ = 25°C, IS = 30A, VGS = 0V Q2 ––– ––– 0.75 TJ = 25°C, IS = 30A, VGS = 0V trr Reverse Recovery Time Q1 ––– 16 ––– ns Q1 TJ = 25°C, IF = 30A Q2 ––– 36 ––– VDD = 13V, di/dt = 235A/µs Qrr Reverse Recovery Charge Q1 ––– 13 ––– nC Q2 TJ = 25°C, IF = 30A Q2 ––– 67 ––– VDD = 13V, di/dt = 190A/µs |
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