NXP Semiconductors

BAT85

Schottky barrier single diode

BAT85

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Product data sheet

24 July 2012

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7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

-

-

240

mV

-

-

320

mV

-

-

400

mV

-

-

500

mV

forward voltage

-

-

800

mV

reverse current

-

-

2

µA

diode capacitance

-

-

10

pF

reverse recovery time

-

-

4

ns

1.2

0.8

0.4

0

(mA)

10

1

mld358

(1) (2) (3)

(1)

(2) (3)

Fig. 1. Forward current as a function of forward

voltage; typical values

mgc682

(nA)

10

1

30

20

10

0

(1)

(2)

(3)

Fig. 2. Reverse current as a function of reverse

voltage; typical values