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ADA4941-1YCPZ-RL Datasheet(PDF) 6 Page - Analog Devices |
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ADA4941-1YCPZ-RL Datasheet(HTML) 6 Page - Analog Devices |
6 / 24 page ADA4941-1 Rev. C | Page 6 of 24 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating Supply Voltage 12 V Power Dissipation See Figure 3 Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature (Soldering 10 sec) 300°C Junction Temperature 150°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, θJA is specified for a device soldered in the circuit board with its exposed paddle soldered to a pad (if applicable) on the PCB surface that is thermally connected to a copper plane, with zero airflow. Table 5. Thermal Resistance Package Type θJA θJC Unit 8-Lead SOIC on 4-Layer Board 126 28 °C/W 8-Lead LFCSP with EP on 4-Layer Board 83 19 °C/W Maximum Power Dissipation The maximum safe power dissipation in the ADA4941-1 package is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the ADA4941-1. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices potentially causing failure. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The power dissipated due to the load drive depends upon the particular application. For each output, the power due to load drive is calculated by multiplying the load current by the associated voltage drop across the device. The power dissipated due to all of the loads is equal to the sum of the power dissipation due to each individual load. RMS voltages and currents must be used in these calculations. Airflow increases heat dissipation, effectively reducing θJA. In addition, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes reduces the θJA. The exposed paddle on the underside of the package must be soldered to a pad on the PCB surface that is thermally connected to a copper plane to achieve the specified θJA. Figure 3 shows the maximum safe power dissipation in the packages vs. the ambient temperature for the 8-lead SOIC (126°C/W) and for the 8-lead LFCSP (83°C/W) on a JEDEC standard 4-layer board. The LFCSP must have its underside paddle soldered to a pad that is thermally connected to a PCB plane. θJA values are approximations. 2.5 0 –40 120 AMBIENT TEMPERATURE (°C) 2.0 1.5 1.0 0.5 –20 0 20 40 60 80 100 LFCSP SOIC Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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