HGTP14N36G3VL datasheet(1/8 Pages) FAIRCHILD

Part #	HGTP14N36G3VL

Description	14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

HGTP14N36G3VL,

HGT1S14N36G3VL,

HGT1S14N36G3VLS

14A, 360V N-Channel,

Logic Level, Voltage Clamping IGBTs

Packages

JEDEC TO-220AB

JEDEC TO-262AA

JEDEC TO-263AB

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

EMITTER

COLLECTOR

GATE

COLLECTOR

(FLANGE)

EMITTER

GATE

COLLECTOR

(FLANGE)

EMITTER

GATE

R2

R1

COLLECTOR

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

• ESD Gate Protection

•TJ = 175

oC

• Ignition Energy Capable

Description

This N-Channel IGBT is a MOS gated, logic level device

which is intended to be used as an ignition coil driver in auto-

motive ignition circuits. Unique features include an active

voltage clamp between the collector and the gate which pro-

vides Self Clamped Inductive Switching (SCIS) capability in

ignition circuits. Internal diodes provide ESD protection for

the logic level gate. Both a series resistor and a shunt

resister are provided in the gate circuit.

The development type number for this device is TA49021.

PACKAGING AVAILABILITY

PART NUMBER

PACKAGE

BRAND

HGTP14N36G3VL

TO-220AB

14N36GVL

HGT1S14N36G3VL

TO-262AA

14N36GVL

HGT1S14N36G3VLS

TO-263AB

14N36GVL

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in the tape and reel, i.e.,

HGT1S14N36G3VLS9A.

December 2001

Absolute Maximum Ratings T

C = +25

oC, Unless Otherwise Specified

HGTP14N36G3VL,

HGT1S14N36G3VL,

HGT1S14N36G3VLS

UNITS

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER

390

V

Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS

24

V

Collector Current Continuous at VGE = 5V, TC = +25

oC. . . . . . . . . . . . . . . . . . . . . . . I

C25

18

A

at VGE = 5V, TC = +100

oC . . . . . . . . . . . . . . . . . . . . . . I

C100

14

A

Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±10

V

Inductive Switching Current at L = 2.3mH, TC = +25

oC . . . . . . . . . . . . . . . . . . . . . . . I

SCIS

17

A

at L = 2.3mH, TC = + 175

oC . . . . . . . . . . . . . . . . . . . . . . I

SCIS

12

A

Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25

oC. . . . . . . . . . . . . . . E

AS

332

mJ

Power Dissipation Total at TC = +25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

100

W

Power Dissipation Derating TC > +25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.67

W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-40 to +175

oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

260

oC

Electrostatic Voltage at 100pF, 1500

Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD

6

KV

NOTE: May be exceeded if IGEM is limited to 10mA.

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