©2004 Fairchild Semiconductor Corporation

RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B1

Absolute Maximum Ratings

RFD14N05L, RFD14N05LSM,

RFP14N05L

UNITS

50

V

50

V

±10

V

14

Refer to Peak Current Curve

A

Refer to UIS Curve

48

0.32

W

-55 to 175

Maximum Temperature for Soldering

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

50

-

-

V

Gate Threshold Voltage

1

-

2

V

Zero Gate Voltage Drain Current

-

-

1

µA

-

50

µA

Gate to Source Leakage Current

-

-

±100

nA

Drain to Source On Resistance (Note 2)

-

-

0.100

Ω

Turn-On Time

--

60

ns

Turn-On Delay Time

-13

-

ns

Rise Time

-24

-

ns

Turn-Off Delay Time

-42

-

ns

Fall Time

-16

-

ns

Turn-Off Time

-

-

100

ns

Total Gate Charge

Figures 20, 21

-

-

40

nC

Gate Charge at 5V

-

-

25

nC

Threshold Gate Charge

-

-

1.5

nC

Input Capacitance

Figure 14

-

670

-

pF

Output Capacitance

-

185

-

pF

Reverse Transfer Capacitance

-50

-

pF

Thermal Resistance Junction to Case

-

-

3.125

Thermal Resistance Junction to Ambient

TO-251 and TO-252

-

-

100

TO-220

-

-

80

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

-

-

1.5

V

Diode Reverse Recovery Time

-

-

125

ns

NOTES:

2. Pulse Test: Pulse Width

≤300ms, Duty Cycle ≤2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current

Capability Curve (Figure 5).

RFD14N05L, RFD14N05LSM, RFP14N05L