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H11A617B3SD Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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H11A617B3SD Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 9 page  4/24/03 Page 2 of 9 © 2003 Fairchild Semiconductor Corporation 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A617 SERIES H11A817 SERIES *Typical values at TA = 25°C. Parameter Symbol Device Value Units TOTAL DEVICE Storage Temperature TSTG All -55 to +150 °C Operating Temperature TOPR All -55 to +100 °C Lead Solder Temperature TSOL All 260 for 10 sec °C Total Device Power Dissipation (-55°C to 50 °C) PD All 200 mW EMITTER Continuous Forward Current IF All 50 mA Reverse Voltage VR H11A617A/B/C/D H11A817/A/B/C/D 6 5 V Forward Current - Peak (1 µs pulse, 300 pps) IF(pk) All 1.0 A LED Power Dissipation (25°C ambient) Derate above 25°C PD All 100 mW 1.33 mW/°C DETECTOR Collector-Emitter Voltage VCEO All 70 V Emitter-Collector Voltage VECO H11AA814/A H11A617A/B/C/D H11A817/A/B/C/D 6 7 6 V Continuous Collector Current IC All 50 mA Detector Power Dissipation (25°C ambient) Derate above 25°C PD All 150 mW 2.0 mW/°C ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device Min Typ* Max Unit EMITTER (IF = 60 mA) VF H11A617A/B/C/D 1.35 1.65 V Input Forward Voltage (IF = 20 mA) H11A817/A/B/C/D 1.2 1.5 (IF = ±20 mA) H11AA814/A 1.2 1.5 Reverse Leakage Current (VR = 6.0 V) IR H11A617A/B/C/D .001 10 µA (VR = 5.0 V) H11A817/A/B/C/D DETECTOR Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO ALL 70 100 V Emitter-Collector Breakdown Voltage (IE = 100 µA, IF = 0) BVECO H11AA814/A 6 10 V H11A617A/B/C/D 7 H11A817/A/B/C/D 6 Collector-Emitter Dark Current (VCE = 10V, IF = 0) ICEO H11AA814/A, H11A817/A/B/C/D, H11A617C/D 1 100 nA H11A617A/B 50 Collector-Emitter Capacitance (VCE = 0 V, f = 1 MHz) CCE ALL 8 pF |
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