©2002 Fairchild Semiconductor Corporation

HGTG27N120BN / HGT5A27N12BN Rev. C1

HGTG27N120BN / HGT5A27N120BN

72A, 1200V, NPT Series N-Channel IGBT

The HGTG27N120BN and HGT5A27N120BN are Non-

Punch Through (NPT) IGBT design. This is a new member

of the MOS gated high voltage switching IGBT family. IGBTs

combine the best features of MOSFETs and bipolar

transistors. This device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49280.

Symbol

Features

• 1200V Switching SOA Capability

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.fairchildsemi.com

• Avalanche Rated

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGTG27N120BN

TO-247

27N120BN

HGT5A27N120BN

TO-247-ST

27N120BN

NOTE: When ordering, use the entire part number.

C

E

G

JEDEC STYLE TO-247-ST

COLLECTOR

(BOTTOM SIDE

METAL)

G

C

E

G

C

E

COLLECTOR

(BOTTOM SIDE

METAL)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,587,713

4,598,461

4,605,948

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

Data Sheet

August 2002