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JANTX2N6770 Datasheet(PDF) 3 Page - Microsemi Corporation

Part # JANTX2N6770
Description  N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
Download  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

JANTX2N6770 Datasheet(HTML) 3 Page - Microsemi Corporation

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T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 3 of 9
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1.0 mA
2N6764
2N6766
2N6768
2N6770
V(BR)DSS
100
200
400
500
V
Gate-Source Voltage (Threshold)
VDS
≥ V
GS , I D = 0.25 mA
VDS
≥ V
GS , I D = 0.25 mA, TJ = +125 °C
VDS
≥ V
GS , I D = 0.25 mA, TJ = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125 °C
IGSS1
IGSS2
±100
±200
nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
VGS = 0 V, VDS = 400 V
2N6764
2N6766
2N6768
2N6770
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 100 V, TJ = +125 °C
VGS = 0 V, VDS = 200 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +125 °C
VGS = 0 V, VDS = 500 V, TJ = +125 °C
2N6764
2N6766
2N6768
2N6770
IDSS2
1.0
mA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +125 °C
2N6764
2N6766
2N6768
2N6770
IDSS3
0.25
mA
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 7.75 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)1
0.055
0.085
0.3
0.4
Ω
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 38.0 A pulsed
VGS = 10 V, ID = 30.0 A pulsed
VGS = 10 V, ID = 14.0 A pulsed
VGS = 10 V, ID = 12.0 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)2
0.065
0.09
0.4
0.5
Ω
Static Drain-Source On-State Resistance
TJ = +125 °C
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 7.75 A pulsed
2N6764
2N6766
2N6768
2N6770
rDS(on)3
0.094
0.153
0.66
0.88
Ω
Diode Forward Voltage
VGS = 0 V, ID = 38.0 A pulsed
VGS = 0 V, ID = 30.0 A pulsed
VGS = 0 V, ID = 14.0 A pulsed
VGS = 0 V, ID = 12.0 A pulsed
2N6764
2N6766
2N6768
2N6770
VSD
1.9
1.9
1.7
1.7
V


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