HGTP3N60A4D9A datasheet(2/9 Pages) FAIRCHILD

Part #	HGTP3N60A4D9A

Description	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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HGT1S3N60A4DS, HGTP3N60A4D Rev. B

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

HGT1S3N60A4DS

HGTP3N60A4D

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES

600

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C25

17

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C110

8A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

40

A

Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

15A at 600V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

70

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.58

W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Speciﬁcations

TJ = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

600

-

V

Collector to Emitter Leakage Current

ICES

VCE = 600V

TJ = 25

oC

-

250

µA

TJ = 125

oC

-

3.0

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = 3A,

VGE = 15V

TJ = 25

oC

-

2.0

2.7

V

TJ = 125

oC

-

1.6

2.2

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 250µA, VCE = 600V

4.5

6.1

7.0

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G = 50Ω, VGE = 15V,

L = 200

µH, VCE = 600V

15

-

A

Gate to Emitter Plateau Voltage

VGEP

IC = 3A, VCE = 300V

-

8.8

-

V

On-State Gate Charge

Qg(ON)

IC = 3A,

VCE = 300V

VGE = 15V

-

21

25

nC

VGE = 20V

-

26

32

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25

oC,

ICE = 3A,

VCE = 390V,

VGE = 15V,

RG = 50Ω,

L = 1mH,

Test Circuit (Figure 24)

-6

-

ns

Current Rise Time

trI

-11

-

ns

Current Turn-Off Delay Time

td(OFF)I

-73

-

ns

Current Fall Time

tfI

-47

-

ns

Turn-On Energy (Note 2)

EON1

-37

-

µJ

Turn-On Energy (Note 2)

EON2

-55

70

µJ

Turn-Off Energy (Note 3)

EOFF

-25

35

µJ

HGT1S3N60A4DS, HGTP3N60A4D

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