©2001 Fairchild Semiconductor Corporation

HGT1N40N60A4D Rev. B

HGT1N40N60A4D

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

The HGT1N40N60A4D is a MOS gated high voltage

switching device combining the best features of a MOSFET

and a bipolar transistor. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

IGBT is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses

are essential. This device has been optimized for high

frequency switch mode power supplies.

Formerly Developmental Type TA49349.

Features

• 100kHz Operation At 390V, 22A

• 600V Switching SOA Capability

• Low Conduction Loss

Symbol

Packaging

JEDEC STYLE SOT-227B

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGT1N40N60A4D

SOT-227

40N60A4D

NOTE: When ordering, use the entire part number.

C

E

G

GATE

COLLECTOR

EMITTER

EMITTER

TAB

(ISOLATED)

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,587,713

4,598,461

4,605,948

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

Data Sheet

December 2001