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SI2303BDS-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI2303BDS-T1-E3
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2303BDS-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number: 72065
S-80642-Rev. C, 24-Mar-08
Vishay Siliconix
Si2303BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25 °C
1
- 0.6
- 0.3
0.0
0.3
0.6
0.9
- 50
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
ID = 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.0
0.2
0.4
0.6
0.8
1.0
0
2468
10
VGS - Gate-to-Source Voltage (V)
ID = 1.7 A
Time (s)
TA = 25 °C
10
8
6
4
2
0
0.01
0.1
1
10
100
1000
Safe Operating Area, Junction-to-Case
Square Wave Pulse Duration (s)
VDS - Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
0.1
Limited
by RDS(on)*
TA = 25 °C
Single Pulse
10 ms
100 ms
10 µs
100 µs
1 ms
DC, 100 s, 10 s, 1 s
* VGS > minimum VGS at which RDS(on) is specified


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