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H11N1 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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H11N1 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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4/14/03 Page 2 of 9 © 2003 Fairchild Semiconductor Corporation 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M *Typical values at TA = 25°C ABSOLUTE MAXIMUM RATINGS Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature TSTG All -55 to +150 °C Operating Temperature TOPR All -40 to +85 °C Lead Solder Temperature TSOL All 260 for 10 sec °C Total Device Power Dissipation @ 25°C PD All 250 mW Derate Above 25°C 2.94 mW/°C EMITTER Continuous Forward Current IF All 30 mA Reverse Voltage VR All 6 V Forward Current - Peak (1 µs pulse, 300 pps) IF(pk) All 1.0 A LED Power Dissipation 25°C Ambient PD All 120 mW Derate Linearly From 25°C 1.41 mW/°C DETECTOR Detector Power Dissipation @ 25°C PD All 150 mW Derate Linearly from 25°C 1.76 mW/°C V45 Allowed Range VO All 0 to 16 V V65 Allowed Range VCC All 0 to 16 V I4 Output Current IO All 50 mA ELECTRICAL CHARACTERISTICS (TA = 0-70°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters Test Conditions Symbol Device Min Typ* Max Units EMITTER Input Forward Voltage IF = 10 mA VF All 1.4 2 V IF = 0.3 mA 0.75 1.25 Reverse Current VR = 5 V IR All 10 µA Capacitance V = 0, f = 1.0 MHz CJ All 100 pF DETECTOR Operating Voltage Range VCC All 4 15 V Supply Current IF = 0, VCC = 5V ICC(off) All 6 10 mA Output Current, High IF = 0.3mA, VCC = VO = 15V IOH All 100 µA |
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