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H11G1 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. H11G1
Description  HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

H11G1 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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ELECTRICAL CHARACTERISTICS (T
A = 25°C Unless otherwise specified.)
7/21/00
200045A
Characteristic
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
EMITTER
(IF = 10 mA)
VF
ALL
1.3
1.50
V
Forward Voltage
Forward Voltage Temp.
VF
ALL
-1.8
mV/°C
Coefficient
TA
Reverse Breakdown Voltage
(IR = 10 µA)
BVR
ALL
3.0
25
V
Junction Capacitance
(VF = 0 V, f = 1 MHz)
CJ
ALL
50
pF
(VF = 1 V, f = 1 MHz)
ALL
65
pF
Reverse Leakage Current
(VR = 3.0 V)
IR
ALL
0.001
10
µA
DETECTOR
H11G1
100
Breakdown Voltage
(IC = 1.0 mA, IF = 0)
BVCEO
H11G2
80
Collector to Emitter
H11G3
55
H11G1
100
V
Collector to Base
(IC = 100 µA)
BVCBO
H11G2
80
H11G3
55
Emitter to Base
BVEBO
ALL
7
10
(VCE = 80 V, IF = 0)
H11G1
Leakage Current
(VCE = 60 V, IF = 0)
H11G2
100
nA
Collector to Emitter
(VCE = 30 V, IF = 0)
ICEO
H11G3
(VCE = 80 V, IF = 0, TA = 80°C)
H11G1
100
µA
(VCE = 60 V, IF = 0, TA = 80°C)
H11G2
INDIVIDUAL COMPONENT CHARACTERISTICS
DC Characteristic
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
EMITTER
Current Transfer Ratio
(IF = 10 mA, VCE = 1 V)
H11G1/2 100 (1000)
Collector to Emitter
CTR
mA (%)
(IF = 1 mA, VCE = 5 V)
H11G1/2
5 (500)
H11G3
2 (200)
(IF = 16 mA, IC = 50 mA)
H11G1/2
0.85
1.0
Saturation Voltage
(IF = 1 mA, IC = 1 mA)
VCE (SAT) H11G1/2
0.75
1.0
V
(IF = 20 mA, IC = 50 mA)
H11G3
0.85
1.2
TRANSFER CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
SWITCHING TIMES
(RL = 100 , IF = 10 mA)
ton
ALL
5
Turn-on Time
µs
Turn-off Time
(VCE = 5 V) Pulse Width
300 µs, f
30 Hz)
toff
ALL
100
TRANSFER CHARACTERISTICS
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1, H11G2, H11G3
** All typical values at TA = 25°C


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