 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
FSCM0565RGWDTU Datasheet(PDF) 5 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FSCM0565RGWDTU Datasheet(HTML) 5 Page - Fairchild Semiconductor |
|
|
5 / 20 page 
FSCM0565R 5 Electrical Characteristics (Ta = 25 °C unless otherwise specified.) Notes: 1. Pulse Test: Pulse width ≤ 300μS, duty ≤ 2% 2. These parameters, although guaranteed at the design, are not tested in mass production. Parameter Symbol Condition Min. Typ. Max. Unit SenseFET SECTION Drain Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 - - V Zero-Gate-Voltage Current IDSS VDS = Max, Rating VGS = 0V - - 500 μA Static Drain Source on Resistance (1) RDS(ON) VGS = 10V, ID = 2.3A - 1.76 2.2 Ω Output Capacitance COSS VGS = 0V, VDS = 25V, f = 1MHz -78 - pF Turn on Delay Time TD(ON) VDD = 325V, ID = 5A (MOSFET switching time is essentially independent of operating temperature) -22 - ns Rise Time TR -52 - Turn off Delay Time TD(OFF) -95 - Fall Time TF -50 - CONTROL SECTION Initial Frequency FOSC VCC = 14V, VFB = 5V 60 66 72 kHz Modulated Frequency Range ΔFmod -- ±3 - kHz Frequency Modulation Cycle Tmod -- 4 - ms Voltage Stability FSTABLE 10V ≤ VCC ≤ 17V 0 1 3 % Temperature Stability (2) ΔFOSC −25°C ≤ Ta ≤ +85°C - ±5 ±10 % Maximum Duty Cycle DMAX -75 80 85 % Minimum Duty Cycle DMIN -- - 0 % Start Threshold Voltage VSTART VFB = GND 11 12 13 V Stop Threshold Voltage VSTOP VFB = GND 7 8 9 V Feedback Source Current IFB VFB = GND 0.7 0.9 1.1 mA Soft-start Time TSS -10 15 20 ms BURST MODE SECTION Burst Mode Voltages (2) VBH VCC =14V 0.4 0.5 0.6 V VBL VCC = 14V 0.24 0.3 0.36 V |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
