 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
FSCM0565RGWDTU Datasheet(PDF) 4 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FSCM0565RGWDTU Datasheet(HTML) 4 Page - Fairchild Semiconductor |
|
|
4 / 20 page 
FSCM0565R 4 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified.) Notes: 1. Tj = 25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature. Thermal Impedance Note: 1. Free standing with no heat-sink under natural convection 2. Infinite cooling condition - Refer to the SEMI G30-88. Parameter Symbol Value Unit Drain-Source (GND) Voltage (1) VDSS 650 V Drain-Gate Voltage (RGS=1MΩ)VDGR 650 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 20 ADC Continuous Drain Current (D2-PAK, I2-PAK) @ Tc = 25°C ID 3.9 ADC @ Tc =100 °CID 2.5 ADC Continuous Drain Current (TO-220) @ Tc = 25°C ID 5ADC @ Tc =100 °CID 3.2 ADC Supply Voltage VCC 20 V Analog Input Voltage Range VFB -0.3 to VCC V Total Power Dissipation (D2-PAK,I2-PAK) PD 75 W Total Power Dissipation (TO-220) PD 120 W Operating Junction Temperature TJ Internally limited °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature Range TSTG -55 to +150 °C ESD Capability, HBM Model (All pins except Vfb) - 2.0 (GND-Vfb = 1.5kV) (Vcc-Vfb = 1.0kV) kV ESD Capability, Machine Model (All pins except Vfb) - 300 (GND-Vfb = 250V) (Vcc-Vfb = 100V) V Parameter Symbol Value Unit Junction-to-Ambient Thermal θJA(1) - °C/W Junction-to-Case Thermal (D2-PAK, I2-PAK) θJC(2) 1.7 °C/W Junction-to-Case Thermal (TO-220) θJC(2) 1.0 °C/W |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
