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H11D1 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. H11D1
Description  HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

H11D1 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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8/9/00
200046A
H11D1, H11D2, H11D3, H11D4, 4N38
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C
ELECTRICAL CHARACTERISTICS (T
A = 25°C Unless otherwise specified.)
Characteristic
Test Conditions
Symbol
Device
Min
Typ**
Max
Unit
EMITTER
(IF = 10 mA)
VF
ALL
1.15
1.5
V
*Forward Voltage
Forward Voltage Temp.
!VF
ALL
-1.8
mV/°C
Coefficient
!TA
Reverse Breakdown Voltage
(IR = 10 µA)
BVR
ALL
6
25
V
Junction Capacitance
(VF = 0 V, f = 1 MHz)
CJ
ALL
50
pF
(VF = 1 V, f = 1 MHz)
ALL
65
pF
*Reverse Leakage Current
(VR = 6 V)
IR
ALL
0.05
10
µA
DETECTOR
(RBE = 1 M")
BVCER
H11D1/2
300
*Breakdown Voltage
(IC = 1.0 mA, IF = 0)
H11D3/4
200
Collector to Emitter
(No RBE) (IC = 1.0 mA)
BVCEO
4N38
80
H11D1/2
300
V
*Collector to Base
(IC = 100 µA, IF = 0)
BVCBO
H11D3/4
200
4N38
80
Emitter to Base
(IE = 100 µA , IF = 0)
BVEBO
4N38
7
Emitter to Collector
BVECO
ALL
7
10
(VCE = 200 V, IF = 0, TA = 25°C)
H11D1/2
100
nA
*Leakage Current
(VCE = 200 V, IF = 0, TA = 100°C)
ICER
250
µA
Collector to Emitter
(VCE = 100 V, IF = 0, TA = 25°C)
H11D3/4
100
nA
(RBE = 1 M")(VCE = 100 V, IF = 0, TA = 100°C)
250
µA
(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)
ICEO
4N38
50
nA
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Symbol
Value
Units
DETECTOR
300
mW
*Power Dissipation @ TA = 25°CPD
Derate linearly above 25°C
4.0
mW/°C
H11D1 - H11D2
300
*Collector to Emitter Voltage
H11D3 - H11D4
VCER
200
4N38
80
H11D1 - H11D2
300
V
*Collector Base Voltage
H11D3 - H11D4
VCBO
200
4N38
80
*Emitter to Collector Voltage
H11D1 - H11D2
VECO
7
H11D3 - H11D4
Collector Current (Continuous)
100
mA
ABSOLUTE MAXIMUM RATINGS (Cont.)


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