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H11D1 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. H11D1
Description  HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

H11D1 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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Parameter
Symbol
Value
Units
TOTAL DEVICE
TSTG
-55 to +150
°C
Storage Temperature
Operating Temperature
TOPR
-55 to +100
°C
Lead Solder Temperature
TSOL
260 for 10 sec
°C
Total Device Power Dissipation @ TA = 25°C
PD
260
mW
Derate above 25°C
3.5
mW/°C
EMITTER
IF
80
mA
*Forward DC Current
*Reverse Input Voltage
VR
6.0
V
*Forward Current - Peak (1µs pulse, 300pps)
IF(pk)
3.0
A
*LED Power Dissipation @ TA = 25°C
PD
150
mW
Derate above 25°C
1.41
mW/°C
FEATURES
• High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
8/9/00
200046A
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6 BASE
N/C
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1
H11D2
H11D3
H11D4
4N38
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls
ABSOLUTE MAXIMUM RATINGS


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