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H11D1 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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H11D1 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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Parameter Symbol Value Units TOTAL DEVICE TSTG -55 to +150 °C Storage Temperature Operating Temperature TOPR -55 to +100 °C Lead Solder Temperature TSOL 260 for 10 sec °C Total Device Power Dissipation @ TA = 25°C PD 260 mW Derate above 25°C 3.5 mW/°C EMITTER IF 80 mA *Forward DC Current *Reverse Input Voltage VR 6.0 V *Forward Current - Peak (1µs pulse, 300pps) IF(pk) 3.0 A *LED Power Dissipation @ TA = 25°C PD 150 mW Derate above 25°C 1.41 mW/°C FEATURES • High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute • Underwriters Laboratory (UL) recognized File# E90700 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. 8/9/00 200046A EMITTER COLLECTOR 1 2 3 ANODE CATHODE 4 5 6 BASE N/C HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 APPLICATIONS • Power supply regulators • Digital logic inputs • Microprocessor inputs • Appliance sensor systems • Industrial controls ABSOLUTE MAXIMUM RATINGS |
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