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Electronic Components Datasheet Search |
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H11D1 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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H11D1 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 8 page 
VCE - COLLECTOR VOLTAGE (V) Fig.2 Normalized Output Characteristics 0.1 1 10 100 0.01 0.1 1 10 Normalized to: VCE = 10 V IF = 10 mA RBE = 106 Ω TA = 25˚C IF = 50 mA IF = 5 mA IF = 10 mA IF - LED FORWARDCURRENT (mA) Fig.1 LED Forward Voltage vs. Forward Current 1 10 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 TA = 55˚C TA = 25˚C TA = 100˚C 8/9/00 200046A H11D1, H11D2, H11D3, H11D4, 4N38 HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit EMITTER H11D1 Current Transfer Ratio (IF = 10 mA, VCE = 10 V) H11D2 2 (20) Collector to Emitter (RBE = 1 M") CTR H11D3 mA (%) H11D4 1 (10) (IF = 10 mA, VCE = 10 V) 4N38 2 (20) (IF = 10 mA, IC = 0.5 mA) H11D1/2/3/4 0.1 0.40 *Saturation Voltage (RBE = 1 M")VCE (SAT) V (IF = 20 mA, IC = 4 mA) 4N38 1.0 TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit SWITCHING TIMES (VCE =10 V, ICE = 2 mA) ton ALL 5 Non-Saturated Turn-on Time µs Turn-off Time (RL = 100 ") toff ALL 5 TRANSFER CHARACTERISTICS Characteristic Test Conditions Symbol Device Min Typ** Max Unit Isolation Voltage (II-O #$1 µA, 1 min.) VISO ALL 5300 (VACRMS) 7500 (VACPEAK) Isolation Resistance (VI-O = 500 VDC) RISO ALL 1011 " Isolation Capacitance (f = 1 MHz) CISO ALL 0.5 pF ISOLATION CHARACTERISTICS Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at TA = 25°C |
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