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ATF-33143 Datasheet(PDF) 5 Page - AVAGO TECHNOLOGIES LIMITED |
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ATF-33143 Datasheet(HTML) 5 Page - AVAGO TECHNOLOGIES LIMITED |
5 / 18 page ![]() 5 ATF-35143 Typical Performance Curves, continued Notes: 1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de- embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached. FREQUENCY (GHz) Figure 12. Fmin vs. Frequency and Current at 2V. 010 1.50 1.25 1.00 0.75 0.50 0.25 0 4 28 6 5 mA 15 mA 30 mA FREQUENCY (GHz) Figure 13. Associated Gain vs. Frequency and Current at 2V. 010 25 20 15 10 5 4 28 6 5 mA 15 mA 30 mA FREQUENCY (GHz) Figure 14. Fmin and Ga vs. Frequency and Temperature, VDS=2V, IDS=15 mA. 08 24 6 25C -40C 85C 22 20 18 16 14 12 IDS (mA) Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1] (Active Bias, 2V, 3.9 GHz). 080 20 40 60 P1dB OIP3 Gain NF 25 20 15 10 5 0 2.5 2 1.5 1 0.5 0 1.0 0.8 0.6 0.4 0.2 0 IDS (mA) Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1] (Active Bias, 2V, 5.8 GHz). 080 20 40 60 P1dB OIP3 Gain NF 25 20 15 10 5 0 -5 3 2.5 2 1.5 1 0.5 0 FREQUENCY (GHz) Figure 15. OIP3 and P1dB vs. Frequency and Temperature[1,2], VDS=2V, IDS=15 mA. 08 24 6 25C -40C 85C 25 20 15 10 5 |
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