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ATF-33143 Datasheet(PDF) 4 Page - AVAGO TECHNOLOGIES LIMITED

Part No. ATF-33143
Description  Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Low Noise Figure
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Maker  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Homepage  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

ATF-33143 Datasheet(HTML) 4 Page - AVAGO TECHNOLOGIES LIMITED

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4
ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V 15 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power
output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is
approached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. Bias at 2 GHz.
[1,2]
060
30
25
20
15
10
5
0
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
IDSQ (mA)
Figure 7. OIP3 and P1dB vs. Bias at 900 MHz.
[1,2]
060
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
30
25
20
15
10
5
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2 GHz.[1]
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
20
19
18
17
16
15
2.5
2
1.5
1
0.5
0
IDSQ (mA)
Figure 9. NF and Ga vs. Bias at 900 MHz.[1]
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
24
22
20
18
16
14
2.5
2
1.5
1
0.5
0
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 2 GHz.[1]
080
25
20
15
10
5
0
-5
20
40
60
2 V
3 V
4 V
IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 900 MHz.[1]
080
20
40
60
2 V
3 V
4 V
20
15
10
5
0
-5


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