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ATF-33143 Datasheet(PDF) 16 Page - AVAGO TECHNOLOGIES LIMITED

Part No. ATF-33143
Description  Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Low Noise Figure
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Maker  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Homepage  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

ATF-33143 Datasheet(HTML) 16 Page - AVAGO TECHNOLOGIES LIMITED

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L=Lc
L=Lb
R=Rb
L=Lb
R=Rb
L
C
C=Ca
C
C=Cb
LOSSYL
L=Lb
R=Rb
L=La*.5
L=Ld
L
L
LOSSYL
GATE_IN
SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=La
L=Lb
R=Rb
L
LOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
This model can be used as a design tool. It has been tested
on MDS for various specifications. However, for more precise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.
NFETMESFET
G
MODEL=FET
W=400
μm
D
S
S
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown
FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01 *W/200
EQUATION Beta=0.06 *W/200
EQUATION Rd=200/W
EQUATION Rs=.5 *200/W
EQUATION Cgs=0.2 *W/200
EQUATION Cgd=0.04 *W/200
EQUATION Lg=0.03 *200/W
EQUATION Ld=0.03 *200/W
EQUATION Ls=0.01 *200/W
EQUATION Rc=500 *200/W
* STATZ MESFET MODEL *
MODEL = FET
ATF-35143 Die Model


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