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MT46V32M16 Datasheet(PDF) 71 Page - Micron Technology

Part # MT46V32M16
Description  512Mb: x4, x8, x16 Double Data Rate SDRAM Features
Download  93 Pages
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT46V32M16 Datasheet(HTML) 71 Page - Micron Technology

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PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. Q; Core DDR Rev. E 7/11 EN
71
©2000 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Operations
Figure 35:
Bank READ – Without Auto Precharge
Notes:
1. NOP commands are shown for ease of illustration; other commands may be valid at these
times.
2. BL = 4.
3. The PRECHARGE command can only be applied at T5 if tRAS (MIN) is met.
4. Disable auto precharge.
5. “Don’t Care” if A10 is HIGH at T5.
6. DO n (or b) = data-out from column n (or column b); subsequent elements are provided in
the programmed order.
7. Refer to Figure 36 on page 72, Figure 37 on page 73, and Figure 38 on page 74 for detailed
DQS and DQ timing.
CK
CK#
CKE
A10
BA0, BA1
tCK
tCH
tCL
tIS
tIS
tIH
tIS
tIS
tIH
tIH
tIH
tIS
tIH
tRCD
tRC
tRP
CL = 2
DM
T0
T1
T2
T3
T4
T5
T5n
T6n
T6
T7
T8
DQS
Case 1: tAC (MIN) and tDQSCK (MIN)
Case 2: tAC (MAX) and tDQSCK (MAX)
DQS
tRPRE
tRPRE
tRPST
tRPST
tDQSCK (MIN)
tLZ (MIN)
tAC (MIN)
tLZ (MIN)
DO
n
tHZ (MAX)
tAC (MAX)
DO
n
ACT
Col n
Bank x
Bank x
ACT
Bank x
tDQSCK (MAX)
NOP
1
NOP
1
NOP
1
NOP
1
NOP
1
READ
2
PRE
3
4
Bank x
5
tRAS3
Row
Row
Row
Row
DQ
DQ
Command
Address
Transitioning Data
Don’t Care
All banks
One bank


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