CM400DU-24NFH

Dual IGBTMOD™ NFH-Series Module

400 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

3

7/11 Rev. 2

Thermal and Mechanical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

Rth(j-c)Q

Per IGBT 1/2 Module, TC Reference

—

—

0.12

°C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case

Rth(j-c)D

Per FWDi 1/2 Module, TC Reference

—

—

0.23

°C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case

Rth(j-c)'Q

Per IGBT 1/2 Module,

—

—

0.051

°C/W

TC Reference Point Under Chips

Thermal Resistance, Junction to Case

Rth(j-c)'D

Per FWDi 1/2 Module, TC Reference

—

—

0.093

°C/W

Point per Outline Drawing

Contact Thermal Resistance

Rth(c-f)

Per 1/2 Module, Thermal Grease Applied

—

0.02

—

°C/W

External Gate Resistance

RG

0.78

—

7.8

Ω

COLLECTOR-EMITTER VOLTAGE, V

CAPACITANCE VS. VCE

(TYPICAL)

01

34

25

EMITTER-COLLECTOR VOLTAGE, V

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

GATE-EMITTER VOLTAGE, V

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

68

10

14

12

16

18

20

8

6

4

2

0

GATE-EMITTER VOLTAGE, V

TRANSFER CHARACTERISTICS

(TYPICAL)

0

5

15

20

COLLECTOR-EMITTER VOLTAGE, V

OUTPUT CHARACTERISTICS

(TYPICAL)

02

46

810

0

10

11

12

13

14

15

9

8

800

400

600

200

0

800

400

600

200

10

COLLECTOR-CURRENT, I

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

9

4

5

6

3

0

7

2

8

1

0

800

200

400

600