CNY17-2X006 datasheet(2/8 Pages) VISHAY

Part #	CNY17-2X006

Description	Optocoupler, Phototransistor Output, with Base Connection

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Manufacturer	VISHAY [Vishay Siliconix]

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CNY17

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 25-Oct-12

2

Document Number: 83606

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Note

• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering

evaluations. Typical values are for information only and are not part of the testing requirements.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

VR

6V

Forward current

IF

60

mA

Forward surge current

tp

≤ 10 μs

IFSM

2.5

A

LED power dissipation

at 25 °C

Pdiss

70

mW

OUTPUT

Collector emitter breakdown voltage

BVCEO

70

V

Emitter base breakdown voltage

BVEBO

7V

Collector current

IC

50

mA

tp/T = 0.5, tp

≤ 10 ms

IC

100

mA

Power dissipation

Pdiss

150

mW

COUPLER

Isolation test voltage between emitter and detector

t = 1 s

VISO

5000

VRMS

Creepage distance

≥ 7mm

Clearance distance

≥ 7mm

Isolation thickness between emitter and detector

≥ 0.4

mm

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

≥ 175

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Ω

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 110

°C

Soldering temperature (1)

2 mm from case,

≤ 10 s

Tsld

260

°C

Total power dissipation

Pdiss

220

mW

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 60 mA

VF

1.39

1.65

V

Breakdown voltage

IR = 10 μA

VBR

6V

Reverse current

VR = 6 V

IR

0.01

10

μA

Capacitance

VR = 0 V, f = 1 MHz

CO

25

pF

Thermal resistance

Rth

750

K/W

OUTPUT

Collector emitter capacitance

VCE = 5 V, f = 1 MHz

CCE

5.2

pF

Collector base capacitance

VCE = 5 V, f = 1 MHz

CCB

6.5

pF

Emitter base capacitance

VCE = 5 V, f = 1 MHz

CEB

7.5

pF

Thermal resistance

Rth

500

K/W

COUPLER

Collector emitter, saturation voltage

VF = 10 mA, IC = 2.5 mA

VCEsat

0.25

0.4

V

Coupling capacitance

CC

0.6

pF

Collector emitter, leakage current

VCE = 10 V

CNY17-1

ICEO

250

nA

CNY17-2

ICEO

250

nA

CNY17-3

ICEO

5

100

nA

CNY17-4

ICEO

5

100

nA

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