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TDB6HK135N16LOF Datasheet(PDF) 1 Page - Infineon Technologies AG |
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TDB6HK135N16LOF Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT B6C 135 N 16 1) (ISOPACK) NB6 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = - 40°C...Tvj max VDRM, VRRM 1600 V repetitive peak forward off-state and reverse voltages Vorwärts-Stoßspitzensperrspannung Tvj = - 40°C...Tvj max VDSM 1600 V non-repetitive peak forward off-state voltage Rückwärts-Stoßspitzensperrspannung Tvj = + 25°C...Tvj max VRSM 1600 V non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert (pro Element) ITRMSM 100 A RMS on-state current (per chip) Ausgangsstrom TC = 85°C Id 135 A output current TC = 67°C 173 A TA = 45°C, KM 11 49 A TA = 45°C, KM 33 69 A TA = 35°C, KM 14 (VL = 45l/s) 119 A TA = 35°C, KM 33 (VL = 90l/s) 139 A Stoßstrom-Grenzwert Tvj = 25°C, tp = 10ms ITSM 1000 A surge current Tvj = Tvj max, tp = 10ms 870 A Grenzlastintegral Tvj = 25°C, tp = 10ms I²t 5000 A²s I²t-value Tvj = Tvj max, tp = 10ms 3780 A²s Kritische Stromsteilheit DIN IEC 747-6 (di/dt)cr 120 A/µs critical rate of rise of on-state current f = 50Hz, iGM = 0,6A, diG/dt = 0,6A/µs Kritische Spannungssteilheit Tvj = Tvj max, vD = 0,67 VDRM (dv/dt)cr critical rate of rise of off-state voltage 8. Kennbuchstabe / 8th letter F 1000 V/µs Charakteristische Werte / Characteristic values Durchlaßspannung Tvj = Tvj max, iT = 150A vT max. 1,81 V on-state voltage Schleusenspannung Tvj = Tvj max V(TO) 0,95 V threshold voltage Ersatzwiderstand Tvj =Tvj max rT 4,3 m Ω slope resistance Zündstrom Tvj = 25°C, vD = 6V IGT max. 150 mA gate trigger current Zündspannung Tvj = 25°C, vD = 6V VGT max. 2,5 V gate trigger voltage Nicht zündender Steuerstrom Tvj = Tvj max, vD = 6V IGD max. 5,0 mA gate non-trigger current Tvj = Tvj max, vD = 0,5 VDRM max. 2,5 mA Nicht zündende Steuerspannung Tvj = Tvj max, vD = 0,5 VDRM VGD max. 0,2 V gate non-trigger voltage Haltestrom Tvj = 25°C, vD = 6V, RA = 5Ω IH max. 200 mA holding current Einraststrom Tvj = 25°C, vD = 6V, RGK ≥ 20Ω IL max. 600 mA latching current iGM = 0,6A, diG/dt = 0,6A/µs, tg = 10µs Vorwärts- und Rückwärts-Sperrstrom Tvj = Tvj max iD, iR max. 10 mA forward off-state and reverse currents vD = VDRM, vR = VRRM 1) gilt auch für / also valid for TD B6HK 135 N 16 BIP PPE4 rev. 2 21. Okt 05 A 06/05 Seite/page 1(6) |
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