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SI32177-B-GM Datasheet(PDF) 2 Page - Silicon Laboratories |
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SI32177-B-GM Datasheet(HTML) 2 Page - Silicon Laboratories |
2 / 2 page ProSLIC Copyright © 2009 by Silicon Laboratories 4.14.09 Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders Si3217x and Si3291x ProSLIC® Single-Chip FXS Solution with FXO Option Parameter Symbol Test Condition Min Typical Max Unit Ambient Temperature TA F-Grade 0 25 70 °C G-Grade –40 25 85 °C Supply Voltage, Si3217x VDD 3.13 3.3 3.47 V Battery Voltage, Si3217x VBAT –15 — –136/–110 V Maximum Loop Resistance (loop + load) RLOOP ILOOP=18 mA, VBAT = –48 V — — 2000 DC Differential Output Resistance RDO ILOOP < ILIM 160 — 640 Idle Channel Noise C-Message weighted — 8 12 dBrnC PSRR from VDD RX and TX, dc to 3.4 kHz — 55 — dB Longitudinal to Metallic/PCM Balance (forward or reverse) 200 Hz to 1 kHz 58 60 — dB 1 kHz to 3.4 kHz 53 58 — dB Metallic/PCM to Longitudinal Balance 200 Hz to 3.4 kHz 40 — — dB Longitudinal Impedance 200 Hz to 3.4 kHz at TIP or RING — 50 — Longitudinal Current per Pin Active off-hook 200 Hz to 3.4 kHz — 25 — mA DC Feed Current See Table 5, Si3217x Data Sheet VTR = 0 V — — 45 mA 2-Wire Return Loss 200 Hz to 3.4 kHz 26 30 — dB Transhybrid Balance 300 Hz to 3.4 kHz 26 30 — dB Thermal Resistance (QFN-42) θ JA — 32 — °C/W Thermal Resistance (SOIC-16) θ JA — 85 — °C/W Continuous Power Dissipation (QFN-42) PD TA = 85 °C — 1.3 — W Continuous Power Dissipation (SOIC-16) PD TA = 85 °C — 0.47 — W Selected Electrical Specifications Package Information 42-Pin QFN 16-Pin SOIC D D2 e E E2 5.00 BS C b 0.50 BS C 7.00 BS C Min Typ Max MM 0.20 0.25 0.30 3.35 3.40 3.45 A 0.60 0.65 0.70 E3 E4 3.15 3.20 3.25 L 0.35 0.40 0.45 L1 0.05 0.10 0.15 1.65 1.70 1.75 5.35 5.40 5.45 A2 b c D E A1 9.90 BSC Min Max 0.31 0.51 A — 1.75 E1 e L L2 0.10 0.25 1.25 — 0.17 0.25 6.00 BSC 3.90 BSC 1.27 BSC 0.25 BSC h 0.40 1.27 0.25 0.50 ø 0° 8° |
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