IXTQ26P20P datasheet(1/6 Pages) IXYS

Part #	IXTQ26P20P

Description	P-Channel Enhancement Mode Avalanche Rated

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C

- 200

V

DGR

T

J

= 25

°C to 175°C, R

GS = 1MΩ

- 200

V

GSS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C

- 26

A

I

DM

T

C = 25°C, pulse width limited by TJM

- 70

A

I

AR

T

C = 25°C

- 26

A

E

AR

T

C = 25°C50

mJ

E

AS

T

C = 25°C

1.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 175°C

10

V/ns

P

D

T

C = 25°C

300

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque

(TO-3P,TO-220,TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

6.0

g

TO-3P

5.5

g

TO-220

3.0

g

TO-263

2.5

g

DS99913(10/07)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = -250 μA

- 200

V

GS(th)

V

DS = VGS, ID = -250μA

- 2.5

- 4.5

V

I

GSS

V

GS = ±20V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS

- 10

μA

V

GS = 0V

T

J = 150°C

- 250

μA

R

DS(on)

V

GS = -10V, ID = 0.5 • ID25, Note 1

170 m

Ω

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTA26P20P

IXTH26P20P

IXTP26P20P

IXTQ26P20P

V

DSS

= - 200V

I

D25

= - 26A

R

DS(on) ≤

≤≤≤≤

170m

Ω

Preliminary Technical Information

Features:

International standard packages

Fast intrinsic diode

Dynamic dV/dt Rated

Avalanche Rated

Rugged PolarPTM process

Low Q

G and Rds(on) characterization

Low Drain-to-Tab capacitance

Low package inductance

- easy to drive and to protect

Applications:

Hight side switching

Push-pull amplifiers

DC Choppers

Current regulators

Automatic test equipment

Advantages:

Low gate charge results in simple

drive requirement

Improved Gate, Avalanche and

dynamic dV/dt ruggedness

High power density

Fast switching

G = Gate

D = Drain

S = Source

TAB = Drain

TO-263 (I

XTA)

G

S

D(TAB)

TO-247 (IXTH)

TO-220 (I

XTP)

D

D(TAB)

G

S

G

D

S

TO-3P (IXTQ)

D(TAB)

G

D

S

D(TAB)

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