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FS6M12653RTCYDT Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FS6M12653RTCYDT Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page FS6M12653RTC 3 Electrical Characteristics (SFET part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test : Pulse width ≤ 300µS, duty 2% 2. Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V - - 200 µA VDS=520V VGS=0V, TC=125 °C - - 300 µA Static Drain-Source On Resistance (1) RDS(ON) VGS=10V, ID=1.8A - 0.73 0.9 Ω Forward Transconductance (2) gfs VDS=50V, ID=1.8A - - - S Input Capacitance Ciss VGS =0V, VDS=25V, f = 1MHz - 1820 - pF Output Capacitance Coss - 185 - Reverse Transfer Capacitance Crss - 32 - Turn On Delay Time td(on) VDD=325V, ID=6.5A (MOSFET switching time are essentially independent of operating temperature) -38 - nS Rise Time tr - 120 - Turn Off Delay Time td(off) - 200 - Fall Time tf - 100 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=6.5A, VDS=520V (MOSFET Switching time are Essentially independent of Operating temperature) -60 - nC Gate-Source Charge Qgs - 10 - Gate-Drain (Miller) Charge Qgd - 30 - S 1 R ---- = |
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