DMN3052L

Document number: DS31406 Rev. 4 - 2

1 of 6

www.diodes.com

July 2009

© Diodes Incorporated

DMN3052L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low On-Resistance:

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.008 grams (approximate)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

30

V

Gate-Source Voltage

±12

V

Drain Current (Note 1)

5.4

4.6

A

Drain Current (Note 1)

Pulsed

19

A

Body-Diode Continuous Current (Note 1)

2.0

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

1.4

W

90

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. Device mounted on FR-4 PCB. t

≤5 sec.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOT-23

TOP VIEW

Equivalent Circuit

Source

Gate

Drain

D

G

S

TOP VIEW

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