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2N4401BU Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. 2N4401BU
Description  This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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2N4401BU Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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3
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1 mA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 0.1 mA, IC = 0
6.0
V
IBL
Base Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
ICEX
Collector Cutoff Current
VCE = 35 V, VEB = 0.4 V
0.1
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
20
40
80
100
40
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
0.75
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.75
0.95
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 10 V,
f = 100 MHz
250
MHz
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0,
f = 140 kHz
6.5
pF
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0,
f = 140 kHz
30
pF
hie
Input Impedance
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
1.0
15
k
hre
Voltage Feedback Ratio
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
0.1
8.0
x 10
-4
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
40
500
hoe
Output Admittance
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
1.0
30
µmhos
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 30 V, VEB = 2 V,
15
ns
tr
Rise Time
IC = 150 mA, IB1 = 15 mA
20
ns
ts
Storage Time
VCC = 30 V, IC = 150 mA
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
30
ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Test Conditions
Min
Max
Units
NPN General Purpose Amplifier
(continued)


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