1

MRF183 MRF183S

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power

Field Effect Transistors

N–Channel Enhancement–Mode Lateral

MOSFETs

Designed for broadband commercial and industrial applications at frequen-

cies to 1.0 GHz. The high gain and broadband performance of these devices

makes ithem ideal for large–signal, common source amplifier applications in 28

volt base station equipment.

• Guaranteed Performance at 945 MHz, 28 Volts

Output Power – 45 Watts PEP

Power Gain – 11.5 dB

Efficiency – 33%

IMD – 28 dBc

• Characterized with Series Equivalent Large–Signal

Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• 100% Tested for Load Mismatch Stress at all Phase Angles

with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

65

Vdc

Drain–Gate Voltage (RGS = 1 Meg Ohm)

VDGR

65

Vdc

Gate–Source Voltage

VGS

±20

Vdc

Drain Current – Continuous

ID

5

Adc

Total Device Dissipation @ TC = 70°C

Derate above 70

°C

PD

86

0.67

W

W/

°C

Storage Temperature Range

Tstg

– 65 to +200

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.5

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF183/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF183

MRF183S

45 W, 1.0 GHz

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B–01, STYLE 1

(MRF183)

CASE 360C–03, STYLE 1

(MRF183S)

G

D

S

REV 6