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MRF183 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF183
Description  LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF183 Datasheet(HTML) 1 Page - Motorola, Inc

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1
MRF183 MRF183S
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes ithem ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 11.5 dB
Efficiency – 33%
IMD – 28 dBc
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1 Meg Ohm)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current – Continuous
ID
5
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70
°C
PD
86
0.67
W
W/
°C
Storage Temperature Range
Tstg
– 65 to +200
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.5
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF183/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF183
MRF183S
45 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF183)
CASE 360C–03, STYLE 1
(MRF183S)
© Motorola, Inc. 1997
G
D
S
REV 6


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