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SIS443DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIS443DN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 13 page Vishay Siliconix SiS443DN www.vishay.com 2 Document Number: 63253 S13-1470-Rev. B, 24-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 40 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 34 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V - 1 µA VDS = - 40 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0097 0.0117 VGS = - 4.5 V, ID = - 10 A 0.0128 0.0160 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 50 S Dynamicb Input Capacitance Ciss VDS = - 20 V, VGS = 0 V, f = 1 MHz 4370 pF Output Capacitance Coss 300 Reverse Transfer Capacitance Crss 285 Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 10 A 90 135 nC VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A 41.5 63 Gate-Source Charge Qgs 10.6 Gate-Drain Charge Qgd 15.1 Gate Resistance Rg f = 1 MHz 0.4 1.7 3.4 Turn-On Delay Time td(on) VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 12 24 ns Rise Time tr 10 20 Turn-Off DelayTime td(off) 48 95 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 4.5 V, Rg = 1 45 90 Rise Time tr 40 80 Turn-Off DelayTime td(off) 50 100 Fall Time tf 12 24 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 35 A Pulse Diode Forward Current ISM - 80 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.77 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 19 38 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 10 ns Reverse Recovery Rise Time tb 10 |
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