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UMX3NTR Datasheet(PDF) 1 Page - Rohm |
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UMX3NTR Datasheet(HTML) 1 Page - Rohm |
1 / 4 page 1/3 www.rohm.com ○ c 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.B UMX3N Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 0.1Min. 2.1 1.25 IMX3 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 0.3Min. 2.8 1.6 Each lead has same dimensions ROHM : EMT6 EMX3 1.2 1.6 (1) (2) (5) (3) (6) (4) General purpose (dual transistors) EMX3 / UMX3N / IMX3 Features Dimensions (Unit : mm) Two 2SC2412AK chips in a EMT or UMT or SMT package. Inner circuits (1) (2) (3) (4) (5) (6) (6) (5) (4) (3) (2) (1) EMX3 / UMX3N IMX3 Tr2 Tr1 Tr2 Tr1 Package, marking, and packaging specifications Type EMX3 EMT6 X3 T2R 8000 UMX3N UMT6 X3 TR 3000 IMX3 SMT6 X3 T108 3000 Package Marking Code Basic ordering unit (pieces) Absolute maximum ratings (Ta=25 C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60 50 7 150 300(TOTAL) 150(TOTAL) EEMX3 / UMX3N IMX3 150 −55 to +150 Unit V V V mA mW °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. ∗1 ∗2 Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Transition frequency BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT 60 50 7 − − − 120 − − − − − − − − 180 − − − 0.1 0.1 0.4 560 − V V V μA μA V − MHz ∗ Cob − 2 3.5 pF IC =50μA IC =1mA IE =50μA VCB =60V VEB =7V VCE =12V, IE=−2mA, f=100MHz VCB =12V, IE=0mA, f=1MHz IC/IB =50mA/5mA VCE =6V, IC=1mA ∗Transition frequency of the device. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance |
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