RSE002P03TL datasheet(3/5 Pages) ROHM

Part #	RSE002P03TL

Description	4V Drive Pch MOSFET

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Manufacturer	ROHM [Rohm]

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RSE002P03

Transistors

Rev.A

3/4

GATE-SOURCE VOLTAGE :

−VGS (V)

02

3

1

0

20

15

10

5

45

6

8

9

710

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Ta=25

°C

Pulsed

ID=

−125mA

ID=

−250mA

SOURCE-DRAIN VOLTAGE :

−VSD (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.01

1

0.1

1.6

Fig.6 Reverse Drain Current vs.

Source-Drain Voltage

Ta=125

°C

75

°C

25

°C

−25°C

VGS= 0V

Pulsed

GATE-SOURCE VOLTAGE :

−VGS (V)

1.4

0.1

0.01

0.001

1

2.2

1.6 1.8 2.0

2.4 2.6 2.8 3.0 3.2 3.4

Fig.4 Typical Transfer Characteristics

VDS=

−10V

Pulsed

Ta=125

°C

75

°C

25

°C

−25°C

Electrical characteristics curves

DRAIN-SOURCE VOLTAGE :

−VDS (V)

1

10

100

0.01

0.1

1

10

100

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ta=25

°C

f=1MHz

VGS=0V

Ciss

Crss

Coss

DRAIN CURRENT :

−ID (A)

0.01

1

10

100

1000

0.1

1

Fig.2 Switching Characteristics

Ta=25

°C

VDD=

−15V

VGS=

−10V

RG=10

Ω

Pulsed

tf

tr

td (off)

td (on)

TOTAL GATE CHARGE : Qg (nC)

0

1

0

2

4

5

6

7

3

8

0.2

0.4

0.6

0.8

1

Fig.3 Dynamic Input Characteristics

Ta=25

°C

VDD=

−15V

ID=

−250mA

RG=10

Ω

Pulsed

DRAIN CURRENT :

−ID (A)

0.01

0.1

1

0.1

10

1

Fig.7 Static Drain-Source

On-State Resistance vs.

Drain current (

Ι )

Ta=125

°C

75

°C

25

°C

−25°C

VGS=

−10V

Pulsed

DRAIN CURRENT :

−ID (A)

0.01

0.1

1

0.1

10

1

Fig.8 Static Drain-Source

On-State Resistance vs.

Drain current (

ΙΙ )

Ta=125

°C

75

°C

25

°C

−25°C

VGS=

−4.5V

Pulsed

DRAIN CURRENT :

−ID (A)

0.01

0.1

1

0.1

10

1

Fig.9 Static Drain-Source

On-State Resistance vs.

Drain current (

ΙΙΙ )

Ta=125

°C

75

°C

25

°C

−25°C

VGS=

−4V

Pulsed

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